N-Channel Power MOSFET, 100V Vds, 150A Continuous Drain Current (ID). Features 12mΩ maximum drain-source on-resistance (Rds On) and 520W maximum power dissipation. Designed for chassis mounting in a SOT-227-4 MINIBLOC-4 package. Offers a 20V gate-to-source voltage (Vgs) and operates within a temperature range of -55°C to 150°C. Includes 60ns fall time and 100ns turn-off delay time.
PackageSOT-227-4
Current Rating150A
MountingChassis Mount
PolarityN-CHANNEL
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Technical Specifications
Ixys IXFN150N10 technical specifications.
General
| Package/Case | SOT-227-4 |
| Continuous Drain Current (ID) | 150A |
| Current Rating | 150A |
| Drain to Source Breakdown Voltage | 100V |
| Drain to Source Resistance | 12mR |
| Drain to Source Voltage (Vdss) | 100V |
| Drain-source On Resistance-Max | 12mR |
| Fall Time | 60ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 9nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 520W |
| Mount | Chassis Mount |
| Package Quantity | 20 |
| Packaging | Bulk |
| Polarity | N-CHANNEL |
| Power Dissipation | 520W |
| Rds On Max | 12mR |
| RoHS Compliant | Yes |
| Series | HiPerFET™ |
| Turn-Off Delay Time | 100ns |
| DC Rated Voltage | 100V |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXFN150N10 Datasheet
Download the complete datasheet for Ixys IXFN150N10 to view detailed technical specifications.
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