IXFN170N10

N-Channel Power MOSFET featuring 170A continuous drain current and 100V drain-to-source breakdown voltage. This silicon Metal-oxide Semiconductor FET offers a low 10mΩ drain-to-source resistance. Designed for chassis mounting in a SOT-227-4 package, it supports a maximum power dissipation of 600W and operates within a temperature range of -55°C to 150°C. Key electrical characteristics include a 4V nominal gate-to-source voltage and 10.3nF input capacitance.