N-Channel Power MOSFET featuring 170A continuous drain current and 100V drain-to-source breakdown voltage. This silicon Metal-oxide Semiconductor FET offers a low 10mΩ drain-to-source resistance. Designed for chassis mounting in a SOT-227-4 package, it supports a maximum power dissipation of 600W and operates within a temperature range of -55°C to 150°C. Key electrical characteristics include a 4V nominal gate-to-source voltage and 10.3nF input capacitance.
PackageSOT-227-4
MountingChassis Mount
PolarityN-CHANNEL
Power600W
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Technical Specifications
Ixys IXFN170N10 technical specifications.
General
| Package/Case | SOT-227-4 |
| Continuous Drain Current (ID) | 170A |
| Drain to Source Breakdown Voltage | 100V |
| Drain to Source Resistance | 10mR |
| Drain to Source Voltage (Vdss) | 100V |
| Dual Supply Voltage | 100V |
| Fall Time | 79ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 10.3nF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 600W |
| Mount | Chassis Mount |
| Nominal Vgs | 4V |
| Package Quantity | 10 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 600W |
| Rds On Max | 10mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | HiPerFET™ |
| Threshold Voltage | 4V |
| Turn-Off Delay Time | 158ns |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXFN170N10 Datasheet
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