N-Channel Power MOSFET, 180A continuous drain current, 100V drain-source breakdown voltage, and 8mΩ drain-source on-resistance. Features include 600W power dissipation, 65ns fall time, and 140ns turn-off delay. This silicon metal-oxide semiconductor FET is designed for chassis mount with screw termination and operates within a -55°C to 150°C temperature range. It is RoHS compliant and packaged for rail/tube distribution.
PackageSOT-227-4
MountingChassis Mount, Screw
PolarityN-CHANNEL
Power600W
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Technical Specifications
Ixys IXFN180N10 technical specifications.
General
| Package/Case | SOT-227-4 |
| Continuous Drain Current (ID) | 180A |
| Drain to Source Breakdown Voltage | 100V |
| Drain to Source Resistance | 8mR |
| Drain to Source Voltage (Vdss) | 100V |
| Drain-source On Resistance-Max | 8MR |
| Dual Supply Voltage | 100V |
| Fall Time | 65ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 9.1nF |
| Isolation Voltage | 2.5kV |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 600W |
| Mount | Chassis Mount, Screw |
| Nominal Vgs | 4V |
| Package Quantity | 10 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 600W |
| Rds On Max | 8mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | HiPerFET™ |
| Termination | Screw |
| Threshold Voltage | 4V |
| Turn-Off Delay Time | 140ns |
| Weight | 0.042kg |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXFN180N10 Datasheet
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