N-Channel Power MOSFET, 250V Drain-Source Voltage, 168A Continuous Drain Current, and 12.9mΩ Maximum Drain-Source On-Resistance. This single-element silicon Metal-Oxide-Semiconductor FET features a maximum power dissipation of 900W and an operating temperature range of -55°C to 150°C. Packaged in a SOT-227-4 MINIBLOC-4 for chassis mounting, this RoHS compliant component is ideal for high-power applications.
PackageSOT-227-4
MountingChassis Mount
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Technical Specifications
Ixys IXFN180N25T technical specifications.
General
| Package/Case | SOT-227-4 |
| Continuous Drain Current (ID) | 168A |
| Drain to Source Voltage (Vdss) | 250V |
| Drain-source On Resistance-Max | 12.9MR |
| Input Capacitance | 28nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 900W |
| Mount | Chassis Mount |
| Package Quantity | 10 |
| Packaging | Rail/Tube |
| Rds On Max | 12.9mR |
| RoHS Compliant | Yes |
| Series | GigaMOS™ |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXFN180N25T Datasheet
Download the complete datasheet for Ixys IXFN180N25T to view detailed technical specifications.
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