The IXFN20N120P is a high-power N-channel MOSFET with a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. It features a continuous drain current of 20A and a drain to source breakdown voltage of 1.2kV. The device has a drain to source resistance of 570mR and a maximum power dissipation of 595W. It is packaged in a SOT-227-4 package and is RoHS compliant.
PackageSOT-227-4
MountingChassis Mount
PolarityN-CHANNEL
Power595W
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Technical Specifications
Ixys IXFN20N120P technical specifications.
General
| Package/Case | SOT-227-4 |
| Continuous Drain Current (ID) | 20A |
| Drain to Source Breakdown Voltage | 1.2kV |
| Drain to Source Resistance | 570mR |
| Drain to Source Voltage (Vdss) | 1.2kV |
| Fall Time | 70ns |
| Gate to Source Voltage (Vgs) | 30V |
| Input Capacitance | 11.1nF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 595W |
| Mount | Chassis Mount |
| Package Quantity | 10 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 595W |
| Rds On Max | 570mR |
| RoHS Compliant | Yes |
| Series | Polar™ |
| Turn-Off Delay Time | 72ns |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXFN20N120P Datasheet
Download the complete datasheet for Ixys IXFN20N120P to view detailed technical specifications.
No datasheet is available for this part.
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