Ixys
IXFN21N100Q
Power Field-Effect Transistor, 21A I(D), 1000V, 0.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, MINIBLOC-4
Power Field-Effect Transistor, 21A I(D), 1000V, 0.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, MINIBLOC-4
PackageSOT-227-4
MountingChassis Mount
PolarityN-CHANNEL
Power520W
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Technical Specifications
Ixys IXFN21N100Q technical specifications.
General
| Package/Case | SOT-227-4 |
| Continuous Drain Current (ID) | 21A |
| Drain to Source Breakdown Voltage | 1kV |
| Drain to Source Resistance | 500mR |
| Drain to Source Voltage (Vdss) | 1kV |
| Fall Time | 12ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 5.9nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 520W |
| Mount | Chassis Mount |
| Package Quantity | 10 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 520W |
| Rds On Max | 500mR |
| RoHS Compliant | Yes |
| Series | HiPerFET™ |
| Turn-Off Delay Time | 60ns |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXFN21N100Q Datasheet
Download the complete datasheet for Ixys IXFN21N100Q to view detailed technical specifications.
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