The IXFN230N20T is a high-power N-channel MOSFET from Ixys with a maximum operating temperature of 175°C and a minimum operating temperature of -55°C. It features a drain to source voltage of 200V and a continuous drain current of 220A. The device has a maximum power dissipation of 1.09kW and a drain-source on resistance of 7.5mR. The IXFN230N20T is packaged in a SOT-227-4 package and is RoHS compliant. It is suitable for use in high-power applications such as motor control and power supplies.
PackageSOT-227-4
MountingChassis Mount
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Technical Specifications
Ixys IXFN230N20T technical specifications.
General
| Package/Case | SOT-227-4 |
| Continuous Drain Current (ID) | 220A |
| Drain to Source Voltage (Vdss) | 200V |
| Drain-source On Resistance-Max | 7.5MR |
| Input Capacitance | 28nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.09kW |
| Mount | Chassis Mount |
| Packaging | Rail/Tube |
| Rds On Max | 7.5mR |
| RoHS Compliant | Yes |
| Series | GigaMOS™ |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXFN230N20T Datasheet
Download the complete datasheet for Ixys IXFN230N20T to view detailed technical specifications.
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