N-Channel Power MOSFET, featuring 150V Drain-to-Source Voltage (Vdss) and 240A Continuous Drain Current (ID). This silicon Metal-oxide Semiconductor FET offers a low 5.2mΩ Drain-to-Source Resistance (Rds On Max) and a maximum power dissipation of 830W. Designed for chassis mounting in a SOT-227-4 package, it operates within a temperature range of -55°C to 175°C. Key switching characteristics include a 48ns turn-on delay and a 145ns fall time.
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| Package/Case | SOT-227-4 |
| Continuous Drain Current (ID) | 240A |
| Drain to Source Breakdown Voltage | 150V |
| Drain to Source Resistance | 5.2mR |
| Drain to Source Voltage (Vdss) | 150V |
| Fall Time | 145ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 32nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 830W |
| Mount | Chassis Mount |
| Number of Outputs | 1 |
| Output Current | 240A |
| Output Voltage | 150V |
| Package Quantity | 10 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 830W |
| Rds On Max | 5.2mR |
| RoHS Compliant | Yes |
| Series | GigaMOS™ |
| Supply Current | 120A |
| Turn-Off Delay Time | 77ns |
| Turn-On Delay Time | 48ns |
| RoHS | Compliant |
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