
N-Channel Power MOSFET, 1000V Vdss, 24A Continuous Drain Current (ID), 0.39ohm Rds On Max. Features 568W Max Power Dissipation, 2.5kV Isolation Voltage, and a 21ns Fall Time. Designed for chassis or panel mounting with screw termination in a SOT-227-4 package. Operating temperature range from -55°C to 150°C.
Ixys IXFN24N100 technical specifications.
| Package/Case | SOT-227-4 |
| Continuous Drain Current (ID) | 24A |
| Current Rating | 24A |
| Drain to Source Breakdown Voltage | 1kV |
| Drain to Source Resistance | 390mR |
| Drain to Source Voltage (Vdss) | 1kV |
| Dual Supply Voltage | 1kV |
| Fall Time | 21ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 9.6mm |
| Input Capacitance | 8.7nF |
| Isolation Voltage | 2.5kV |
| Lead Free | Lead Free |
| Length | 38.23mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 568W |
| Mount | Chassis Mount, Panel, Screw |
| Nominal Vgs | 5.5V |
| Number of Elements | 1 |
| Package Quantity | 10 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 568W |
| Radiation Hardening | No |
| Rds On Max | 390mR |
| Reach SVHC Compliant | No |
| Reverse Recovery Time | 250ns |
| RoHS Compliant | Yes |
| Series | HiPerFET™ |
| Termination | Screw |
| Threshold Voltage | 5.5V |
| Turn-Off Delay Time | 75ns |
| Turn-On Delay Time | 35ns |
| DC Rated Voltage | 1kV |
| Weight | 40g |
| Width | 25.42mm |
| RoHS | Compliant |
Download the complete datasheet for Ixys IXFN24N100 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
