N-Channel Power MOSFET, 1000V Vdss, 24A Continuous Drain Current (ID), 0.39ohm Rds On Max. Features 568W Max Power Dissipation, 2.5kV Isolation Voltage, and a 21ns Fall Time. Designed for chassis or panel mounting with screw termination in a SOT-227-4 package. Operating temperature range from -55°C to 150°C.
PackageSOT-227-4
Current Rating24A
MountingChassis Mount, Panel, Screw
PolarityN-CHANNEL
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Technical Specifications
Ixys IXFN24N100 technical specifications.
General
Package/Case
SOT-227-4
Continuous Drain Current (ID)
24A
Current Rating
24A
Drain to Source Breakdown Voltage
1kV
Drain to Source Resistance
390mR
Drain to Source Voltage (Vdss)
1kV
Dual Supply Voltage
1kV
Fall Time
21ns
Gate to Source Voltage (Vgs)
20V
Height
9.6mm
Input Capacitance
8.7nF
Isolation Voltage
2.5kV
Lead Free
Lead Free
Length
38.23mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
568W
Mount
Chassis Mount, Panel, Screw
Nominal Vgs
5.5V
Number of Elements
1
Package Quantity
10
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
568W
Radiation Hardening
No
Rds On Max
390mR
Reach SVHC Compliant
No
Reverse Recovery Time
250ns
RoHS Compliant
Yes
Series
HiPerFET™
Termination
Screw
Threshold Voltage
5.5V
Turn-Off Delay Time
75ns
Turn-On Delay Time
35ns
DC Rated Voltage
1kV
Weight
40g
Width
25.42mm
Compliance
RoHS
Compliant
Datasheet
Ixys IXFN24N100 Datasheet
Download the complete datasheet for Ixys IXFN24N100 to view detailed technical specifications.
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