Power Field-Effect Transistor, 24A I(D), 1000V, 0.39ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, MINIBLOC-4
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| Package/Case | SOT-227-4 |
| Continuous Drain Current (ID) | 24A |
| Drain to Source Breakdown Voltage | 1kV |
| Drain to Source Resistance | 390mR |
| Drain to Source Voltage (Vdss) | 1kV |
| Fall Time | 11ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 6.6nF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 600W |
| Mount | Chassis Mount |
| Package Quantity | 10 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 600W |
| Rds On Max | 390mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | HiPerRF™ |
| Turn-Off Delay Time | 52ns |
| RoHS | Compliant |
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