IXFN26N90

Datasheet

900V N-Channel MOSFET, 26A, 300mR Rds(on), SOT-227

Ixys

IXFN26N90

Name: IXFN26N90 Ixys
Brand: Ixys
SKU: IXFN26N90

900V N-Channel MOSFET, 26A, 300mR Rds(on), SOT-227

N-Channel Power MOSFET featuring 900V drain-source breakdown voltage and 26A continuous drain current. This silicon Metal-oxide Semiconductor FET offers a low 300mΩ drain-source resistance and 600W maximum power dissipation. Designed for chassis mounting with screw termination, it operates from -55°C to 150°C and includes a 2.5kV isolation voltage. Key electrical characteristics include a 20V gate-source voltage, 5V threshold voltage, 10.8nF input capacitance, 24ns fall time, and 130ns turn-off delay.

PackageSOT-227-4

Current Rating26A

MountingChassis Mount, Screw

PolarityN-CHANNEL

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Technical Specifications

Ixys IXFN26N90 technical specifications.

General

Package/Case	SOT-227-4
Continuous Drain Current (ID)	26A
Current Rating	26A
Drain to Source Breakdown Voltage	900V
Drain to Source Resistance	300mR
Drain to Source Voltage (Vdss)	900V
Dual Supply Voltage	900V
Fall Time	24ns
Gate to Source Voltage (Vgs)	20V
Input Capacitance	10.8nF
Isolation Voltage	2.5kV
Lead Free	Lead Free
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Max Power Dissipation	600W
Mount	Chassis Mount, Screw
Nominal Vgs	5V
Package Quantity	10
Packaging	Rail/Tube
Polarity	N-CHANNEL
Power Dissipation	600W
Rds On Max	300mR
Reach SVHC Compliant	No
RoHS Compliant	Yes
Series	HiPerFET™
Termination	Screw
Threshold Voltage	5V
Turn-Off Delay Time	130ns
DC Rated Voltage	900V
Weight	0.044kg