N-Channel Power MOSFET featuring 900V drain-source breakdown voltage and 26A continuous drain current. This silicon Metal-oxide Semiconductor FET offers a low 300mΩ drain-source resistance and 600W maximum power dissipation. Designed for chassis mounting with screw termination, it operates from -55°C to 150°C and includes a 2.5kV isolation voltage. Key electrical characteristics include a 20V gate-source voltage, 5V threshold voltage, 10.8nF input capacitance, 24ns fall time, and 130ns turn-off delay.
PackageSOT-227-4
Current Rating26A
MountingChassis Mount, Screw
PolarityN-CHANNEL
Quick Jump:
Technical Specifications
Ixys IXFN26N90 technical specifications.
General
| Package/Case | SOT-227-4 |
| Continuous Drain Current (ID) | 26A |
| Current Rating | 26A |
| Drain to Source Breakdown Voltage | 900V |
| Drain to Source Resistance | 300mR |
| Drain to Source Voltage (Vdss) | 900V |
| Dual Supply Voltage | 900V |
| Fall Time | 24ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 10.8nF |
| Isolation Voltage | 2.5kV |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 600W |
| Mount | Chassis Mount, Screw |
| Nominal Vgs | 5V |
| Package Quantity | 10 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 600W |
| Rds On Max | 300mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | HiPerFET™ |
| Termination | Screw |
| Threshold Voltage | 5V |
| Turn-Off Delay Time | 130ns |
| DC Rated Voltage | 900V |
| Weight | 0.044kg |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXFN26N90 Datasheet
Download the complete datasheet for Ixys IXFN26N90 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
