The IXFN30N110P is a high-power N-channel MOSFET with a maximum operating temperature range of -55°C to 150°C. It features a drain to source breakdown voltage of 1.1kV and a continuous drain current of 25A. The device has a maximum power dissipation of 695W and is packaged in a SOT-227-4 case, suitable for chassis mount applications. The IXFN30N110P is compliant with RoHS regulations and is part of the Polar series.
PackageSOT-227-4
MountingChassis Mount
PolarityN-CHANNEL
Power695W
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Technical Specifications
Ixys IXFN30N110P technical specifications.
General
| Package/Case | SOT-227-4 |
| Continuous Drain Current (ID) | 25A |
| Drain to Source Breakdown Voltage | 1.1kV |
| Drain to Source Resistance | 360mR |
| Drain to Source Voltage (Vdss) | 1.1kV |
| Fall Time | 52ns |
| Gate to Source Voltage (Vgs) | 30V |
| Input Capacitance | 13.6nF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 695W |
| Mount | Chassis Mount |
| Package Quantity | 10 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 695W |
| Rds On Max | 360mR |
| RoHS Compliant | Yes |
| Series | Polar™ |
| Turn-Off Delay Time | 83ns |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXFN30N110P Datasheet
Download the complete datasheet for Ixys IXFN30N110P to view detailed technical specifications.
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