N-Channel Power MOSFET, 170V Vdss, 260A Continuous Drain Current, 5.2mR Rds On. Features a 1.07kW Max Power Dissipation and operates from -55°C to 175°C. This silicon Metal-oxide Semiconductor FET is housed in a SOT-227-4 PLASTIC MINIBLOC-4 package, designed for chassis mounting. Includes 46ns Turn-On Delay Time and 230ns Fall Time.
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Ixys IXFN320N17T2 technical specifications.
| Package/Case | SOT-227-4 |
| Continuous Drain Current (ID) | 260A |
| Drain to Source Breakdown Voltage | 170V |
| Drain to Source Resistance | 5.2mR |
| Drain to Source Voltage (Vdss) | 170V |
| Fall Time | 230ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 45nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.07kW |
| Mount | Chassis Mount |
| Number of Outputs | 1 |
| Output Current | 260A |
| Output Voltage | 170V |
| Package Quantity | 10 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 1.07kW |
| Rds On Max | 5.2mR |
| RoHS Compliant | Yes |
| Series | GigaMOS™ |
| Supply Current | 100A |
| Turn-Off Delay Time | 115ns |
| Turn-On Delay Time | 46ns |
| RoHS | Compliant |
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