The IXFN32N100Q3 is a high-power N-channel MOSFET with a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. It features a continuous drain current of 28A and a drain to source breakdown voltage of 1kV. The device is packaged in a SOT-227-4 case and is RoHS compliant. It has a maximum power dissipation of 780W and a turn-on delay time of 45ns.
PackageSOT-227-4
MountingChassis Mount, Panel
PolarityN-CHANNEL
Power780W
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Technical Specifications
Ixys IXFN32N100Q3 technical specifications.
General
| Package/Case | SOT-227-4 |
| Continuous Drain Current (ID) | 28A |
| Drain to Source Breakdown Voltage | 1kV |
| Drain to Source Resistance | 320mR |
| Drain to Source Voltage (Vdss) | 1kV |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 9.6mm |
| Input Capacitance | 9.94nF |
| Length | 38.23mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 780W |
| Mount | Chassis Mount, Panel |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 780W |
| Rds On Max | 320mR |
| RoHS Compliant | Yes |
| Series | HiPerFET™ |
| Turn-Off Delay Time | 54ns |
| Turn-On Delay Time | 45ns |
| Width | 25.07mm |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXFN32N100Q3 Datasheet
Download the complete datasheet for Ixys IXFN32N100Q3 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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