The IXFN32N80P is a high-power N-channel MOSFET with a maximum operating temperature range of -55°C to 150°C. It features a drain to source breakdown voltage of 800V and a continuous drain current of 29A. The device has a maximum power dissipation of 625W and a drain to source resistance of 270mR. It is packaged in a SOT-227-4 plastic package and is lead free. The IXFN32N80P is RoHS compliant and suitable for chassis mount applications.
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| Package/Case | SOT-227-4 |
| Continuous Drain Current (ID) | 29A |
| Drain to Source Breakdown Voltage | 800V |
| Drain to Source Resistance | 270mR |
| Drain to Source Voltage (Vdss) | 800V |
| Gate to Source Voltage (Vgs) | 30V |
| Input Capacitance | 8.82nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 625W |
| Mount | Chassis Mount |
| Package Quantity | 10 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 625W |
| Rds On Max | 270mR |
| RoHS Compliant | Yes |
| Series | PolarHV™ |
| Turn-Off Delay Time | 85ns |
| RoHS | Compliant |
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