N-Channel Power MOSFET, 70V Drain-Source Voltage, 340A Continuous Drain Current, and 4mΩ Drain-Source On-Resistance. Features a 700W maximum power dissipation and operates within a temperature range of -55°C to 150°C. Designed for chassis mounting with screw terminals, this single-element silicon Metal-Oxide-Semiconductor FET is housed in a SOT-227-4 package. Includes a 33ns fall time and 200ns turn-off delay time, with an input capacitance of 12.2nF. This RoHS compliant component is lead-free.
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| Package/Case | SOT-227-4 |
| Continuous Drain Current (ID) | 340A |
| Drain to Source Breakdown Voltage | 70V |
| Drain to Source Resistance | 4mR |
| Drain to Source Voltage (Vdss) | 70V |
| Drain-source On Resistance-Max | 4MR |
| Fall Time | 33ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 12.2nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 700W |
| Mount | Chassis Mount, Screw |
| Number of Elements | 1 |
| Package Quantity | 25 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 700W |
| Radiation Hardening | No |
| Rds On Max | 4mR |
| RoHS Compliant | Yes |
| Series | HiPerFET™ |
| Turn-Off Delay Time | 200ns |
| RoHS | Compliant |
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