N-channel power MOSFET featuring 100V drain-source voltage and 360A continuous drain current. This silicon, metal-oxide semiconductor FET offers a low 2.6mΩ drain-source on-resistance. Designed for chassis mounting with screw terminals, it operates within a temperature range of -55°C to 175°C and boasts a maximum power dissipation of 830W. Key electrical characteristics include a 20V gate-source voltage, 160ns fall time, and 80ns turn-off delay.
PackageSOT-227-4
MountingChassis Mount, Screw
PolarityN-CHANNEL
Power830W
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Technical Specifications
Ixys IXFN360N10T technical specifications.
General
| Package/Case | SOT-227-4 |
| Continuous Drain Current (ID) | 360A |
| Drain to Source Resistance | 2.6mR |
| Drain to Source Voltage (Vdss) | 100V |
| Drain-source On Resistance-Max | 2.6MR |
| Fall Time | 160ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 36nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 830W |
| Mount | Chassis Mount, Screw |
| Number of Elements | 1 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 830W |
| Radiation Hardening | No |
| Rds On Max | 2.6mR |
| RoHS Compliant | Yes |
| Series | HiPerFET™ |
| Turn-Off Delay Time | 80ns |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXFN360N10T Datasheet
Download the complete datasheet for Ixys IXFN360N10T to view detailed technical specifications.
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