IXFN360N15T2

N-Channel Power MOSFET, 150V Drain-Source Voltage (Vdss), 310A Continuous Drain Current (ID), and 4mΩ Drain-Source On-Resistance (Rds On Max). Features include a 1.07kW Max Power Dissipation, 175°C Max Operating Temperature, and a 265ns Fall Time. This silicon Metal-oxide Semiconductor FET is housed in a SOT-227-4 PLASTIC MINI BLOC package for chassis mounting.