N-Channel Power MOSFET, 150V Drain-Source Voltage (Vdss), 310A Continuous Drain Current (ID), and 4mΩ Drain-Source On-Resistance (Rds On Max). Features include a 1.07kW Max Power Dissipation, 175°C Max Operating Temperature, and a 265ns Fall Time. This silicon Metal-oxide Semiconductor FET is housed in a SOT-227-4 PLASTIC MINI BLOC package for chassis mounting.
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| Package/Case | SOT-227-4 |
| Continuous Drain Current (ID) | 310A |
| Drain to Source Resistance | 4mR |
| Drain to Source Voltage (Vdss) | 150V |
| Drain-source On Resistance-Max | 4mR |
| Fall Time | 265ns |
| Input Capacitance | 47.5nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.07kW |
| Mount | Chassis Mount |
| Number of Outputs | 1 |
| Output Current | 310A |
| Output Voltage | 150V |
| Package Quantity | 10 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Rds On Max | 4mR |
| RoHS Compliant | Yes |
| Series | GigaMOS™ |
| Supply Current | 100A |
| Turn-Off Delay Time | 115ns |
| Turn-On Delay Time | 50ns |
| RoHS | Compliant |
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