N-Channel Power MOSFET, 1000V Vdss, 36A Continuous Drain Current (ID), and 240mΩ Max Drain-Source On-Resistance. Features include a 700W Max Power Dissipation, 2.5kV Isolation Voltage, and a 150°C Max Operating Temperature. This silicon Metal-oxide Semiconductor FET is designed for chassis mount applications with screw termination, packaged in SOT-227-4 MINIBLOC-4. RoHS compliant and lead-free.
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Ixys IXFN36N100 technical specifications.
| Package/Case | SOT-227-4 |
| Continuous Drain Current (ID) | 36A |
| Current Rating | 36A |
| Drain to Source Breakdown Voltage | 1kV |
| Drain to Source Resistance | 240mR |
| Drain to Source Voltage (Vdss) | 1kV |
| Drain-source On Resistance-Max | 240mR |
| Dual Supply Voltage | 1kV |
| Fall Time | 30ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 9.6mm |
| Input Capacitance | 9.2nF |
| Isolation Voltage | 2.5kV |
| Lead Free | Lead Free |
| Length | 38.23mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 700W |
| Mount | Chassis Mount, Panel, Screw |
| Nominal Vgs | 5V |
| Package Quantity | 10 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 700W |
| Rds On Max | 240mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | HiPerFET™ |
| Termination | Screw |
| Threshold Voltage | 5V |
| Turn-Off Delay Time | 110ns |
| Turn-On Delay Time | 41ns |
| DC Rated Voltage | 1kV |
| Weight | 0.046kg |
| Width | 25.42mm |
| RoHS | Compliant |
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