N-Channel Power MOSFET, 1000V Vdss, 36A Continuous Drain Current (ID), and 240mΩ Max Drain-Source On-Resistance. Features include a 700W Max Power Dissipation, 2.5kV Isolation Voltage, and a 150°C Max Operating Temperature. This silicon Metal-oxide Semiconductor FET is designed for chassis mount applications with screw termination, packaged in SOT-227-4 MINIBLOC-4. RoHS compliant and lead-free.
PackageSOT-227-4
Current Rating36A
MountingChassis Mount, Panel, Screw
PolarityN-CHANNEL
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Technical Specifications
Ixys IXFN36N100 technical specifications.
General
Package/Case
SOT-227-4
Continuous Drain Current (ID)
36A
Current Rating
36A
Drain to Source Breakdown Voltage
1kV
Drain to Source Resistance
240mR
Drain to Source Voltage (Vdss)
1kV
Drain-source On Resistance-Max
240mR
Dual Supply Voltage
1kV
Fall Time
30ns
Gate to Source Voltage (Vgs)
20V
Height
9.6mm
Input Capacitance
9.2nF
Isolation Voltage
2.5kV
Lead Free
Lead Free
Length
38.23mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
700W
Mount
Chassis Mount, Panel, Screw
Nominal Vgs
5V
Package Quantity
10
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
700W
Rds On Max
240mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
HiPerFET™
Termination
Screw
Threshold Voltage
5V
Turn-Off Delay Time
110ns
Turn-On Delay Time
41ns
DC Rated Voltage
1kV
Weight
0.046kg
Width
25.42mm
Compliance
RoHS
Compliant
Datasheet
Ixys IXFN36N100 Datasheet
Download the complete datasheet for Ixys IXFN36N100 to view detailed technical specifications.
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