Ixys
IXFN36N110P
Power Field-Effect Transistor, 36A I(D), 1100V, 0.24ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, MINIBLOC-4
Power Field-Effect Transistor, 36A I(D), 1100V, 0.24ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, MINIBLOC-4
PackageSOT-227-4
MountingChassis Mount
PolarityN-CHANNEL
Power1kW
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Technical Specifications
Ixys IXFN36N110P technical specifications.
General
| Package/Case | SOT-227-4 |
| Continuous Drain Current (ID) | 36A |
| Drain to Source Breakdown Voltage | 1.1kV |
| Drain to Source Resistance | 240mR |
| Drain to Source Voltage (Vdss) | 1.1kV |
| Fall Time | 45ns |
| Gate to Source Voltage (Vgs) | 30V |
| Input Capacitance | 23nF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1kW |
| Mount | Chassis Mount |
| Package Quantity | 10 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 1kW |
| Rds On Max | 240mR |
| RoHS Compliant | Yes |
| Series | Polar™ |
| Turn-Off Delay Time | 94ns |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXFN36N110P Datasheet
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