N-channel power MOSFET featuring 800V drain-source breakdown voltage and 38A continuous drain current. This silicon, metal-oxide semiconductor FET offers a low 220mΩ drain-source on-resistance. Designed for chassis mounting with screw terminals, it operates within a -55°C to 150°C temperature range and supports a maximum power dissipation of 735W. Key electrical characteristics include an 8.34nF input capacitance and fast switching times with a 12ns fall time and 60ns turn-off delay.
PackageSOT-227-4
MountingChassis Mount, Screw
PolarityN-CHANNEL
Power735W
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Technical Specifications
Ixys IXFN38N80Q2 technical specifications.
General
| Package/Case | SOT-227-4 |
| Continuous Drain Current (ID) | 38A |
| Drain to Source Breakdown Voltage | 800V |
| Drain to Source Resistance | 220mR |
| Drain to Source Voltage (Vdss) | 800V |
| Drain-source On Resistance-Max | 220MR |
| Fall Time | 12ns |
| Gate to Source Voltage (Vgs) | 30V |
| Input Capacitance | 8.34nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 735W |
| Mount | Chassis Mount, Screw |
| Number of Elements | 1 |
| Package Quantity | 10 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 735W |
| Radiation Hardening | No |
| Rds On Max | 220mR |
| RoHS Compliant | Yes |
| Series | HiPerFET™ |
| Turn-Off Delay Time | 60ns |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXFN38N80Q2 Datasheet
Download the complete datasheet for Ixys IXFN38N80Q2 to view detailed technical specifications.
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