The IXFN40N110P is a high-power N-channel FET from Ixys, featuring a drain to source breakdown voltage of 1.1kV and a continuous drain current of 34A. It has a gate to source voltage of 30V and an input capacitance of 19nF. The device is packaged in a SOT-227-4 package and is RoHS compliant. It operates over a temperature range of -55°C to 150°C and has a maximum power dissipation of 890W.
Checking distributor stock and pricing after the page loads.
Sign in to ask questions about the Ixys IXFN40N110P datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
| Package/Case | SOT-227-4 |
| Continuous Drain Current (ID) | 34A |
| Drain to Source Breakdown Voltage | 1.1kV |
| Drain to Source Resistance | 260mR |
| Drain to Source Voltage (Vdss) | 1.1kV |
| Fall Time | 54ns |
| Gate to Source Voltage (Vgs) | 30V |
| Input Capacitance | 19nF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 890W |
| Mount | Chassis Mount |
| Package Quantity | 10 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 890W |
| Rds On Max | 260mR |
| RoHS Compliant | Yes |
| Series | Polar™ |
| Turn-Off Delay Time | 110ns |
| RoHS | Compliant |
Download the complete datasheet for Ixys IXFN40N110P to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
