Ixys
IXFN40N90P
Power Field-Effect Transistor, 33A I(D), 900V, 0.21ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MINIBLOC-4
Power Field-Effect Transistor, 33A I(D), 900V, 0.21ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MINIBLOC-4
PackageSOT-227-4
MountingChassis Mount, Screw
PolarityN-CHANNEL
Power695W
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Technical Specifications
Ixys IXFN40N90P technical specifications.
General
| Package/Case | SOT-227-4 |
| Continuous Drain Current (ID) | 33A |
| Drain to Source Breakdown Voltage | 900V |
| Drain to Source Resistance | 230mR |
| Drain to Source Voltage (Vdss) | 900V |
| Gate to Source Voltage (Vgs) | 30V |
| Input Capacitance | 14nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 695W |
| Mount | Chassis Mount, Screw |
| Number of Elements | 1 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 695W |
| Rds On Max | 210mR |
| RoHS Compliant | Yes |
| Series | Polar™ |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXFN40N90P Datasheet
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