N-Channel Power MOSFET featuring 500V drain-source breakdown voltage and 44A continuous drain current. Offers a low 120mΩ drain-source on-resistance. Designed for chassis mounting with a SOT-227-4 package, this single-element silicon FET supports a maximum power dissipation of 520W. Operating temperature range is -55°C to 150°C, with a 20V gate-source voltage rating.
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| Package/Case | SOT-227-4 |
| Continuous Drain Current (ID) | 44A |
| Current Rating | 44A |
| Drain to Source Breakdown Voltage | 500V |
| Drain to Source Resistance | 120mR |
| Drain to Source Voltage (Vdss) | 500V |
| Drain-source On Resistance-Max | 120mR |
| Fall Time | 30ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 8.4nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 520W |
| Mount | Chassis Mount, Screw |
| Number of Elements | 1 |
| Package Quantity | 10 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 520W |
| Radiation Hardening | No |
| Rds On Max | 120mR |
| RoHS Compliant | Yes |
| Series | HiPerFET™ |
| Turn-Off Delay Time | 100ns |
| DC Rated Voltage | 500V |
| RoHS | Compliant |
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