N-Channel Power MOSFET featuring 500V drain-source breakdown voltage and 44A continuous drain current. Offers a low 120mΩ drain-source on-resistance. Designed for chassis mounting with a SOT-227-4 package, this single-element silicon FET supports a maximum power dissipation of 520W. Operating temperature range is -55°C to 150°C, with a 20V gate-source voltage rating.
PackageSOT-227-4
Current Rating44A
MountingChassis Mount, Screw
PolarityN-CHANNEL
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Technical Specifications
Ixys IXFN44N50 technical specifications.
General
Package/Case
SOT-227-4
Continuous Drain Current (ID)
44A
Current Rating
44A
Drain to Source Breakdown Voltage
500V
Drain to Source Resistance
120mR
Drain to Source Voltage (Vdss)
500V
Drain-source On Resistance-Max
120mR
Fall Time
30ns
Gate to Source Voltage (Vgs)
20V
Input Capacitance
8.4nF
Lead Free
Lead Free
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
520W
Mount
Chassis Mount, Screw
Number of Elements
1
Package Quantity
10
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
520W
Radiation Hardening
No
Rds On Max
120mR
RoHS Compliant
Yes
Series
HiPerFET™
Turn-Off Delay Time
100ns
DC Rated Voltage
500V
Compliance
RoHS
Compliant
Datasheet
Ixys IXFN44N50 Datasheet
Download the complete datasheet for Ixys IXFN44N50 to view detailed technical specifications.
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