N-Channel Power MOSFET, 500V Vds, 44A Continuous Drain Current, 120mΩ Rds On. Features 500W Max Power Dissipation, 2.5kV Isolation Voltage, and a 150°C Max Operating Temperature. This silicon Metal-oxide Semiconductor FET is housed in a SOT-227-4 MINIBLOC-4 plastic package with screw termination for chassis mounting. Includes 7nF input capacitance and 10ns fall time.
PackageSOT-227-4
MountingChassis Mount
PolarityN-CHANNEL
Power500W
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Technical Specifications
Ixys IXFN44N50Q technical specifications.
General
| Package/Case | SOT-227-4 |
| Continuous Drain Current (ID) | 44A |
| Drain to Source Breakdown Voltage | 500V |
| Drain to Source Resistance | 120mR |
| Drain to Source Voltage (Vdss) | 500V |
| Dual Supply Voltage | 500V |
| Fall Time | 10ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 7nF |
| Isolation Voltage | 2.5kV |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 500W |
| Mount | Chassis Mount |
| Nominal Vgs | 4V |
| Package Quantity | 10 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 500W |
| Rds On Max | 120mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | HiPerFET™ |
| Termination | Screw |
| Threshold Voltage | 4V |
| Turn-Off Delay Time | 75ns |
| Weight | 0.044kg |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXFN44N50Q Datasheet
Download the complete datasheet for Ixys IXFN44N50Q to view detailed technical specifications.
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