N-Channel Power MOSFET, 800V Drain-Source Voltage, 44A Continuous Drain Current, and 165mΩ Max Drain-Source On-Resistance. This silicon Metal-Oxide Semiconductor FET features a 700W power dissipation and a MINIBLOC-4 package with screw termination for chassis mounting. Key specifications include a 24ns fall time, 250ns reverse recovery time, and 100ns turn-off delay time. Operating temperature range is -55°C to 150°C.
PackageSOT-227-4
MountingChassis Mount
PolarityN-CHANNEL
Power700W
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Technical Specifications
Ixys IXFN44N80 technical specifications.
General
| Package/Case | SOT-227-4 |
| Continuous Drain Current (ID) | 44A |
| Drain to Source Breakdown Voltage | 800V |
| Drain to Source Resistance | 165mR |
| Drain to Source Voltage (Vdss) | 800V |
| Drain-source On Resistance-Max | 165mR |
| Dual Supply Voltage | 800V |
| Fall Time | 24ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 10nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 700W |
| Mount | Chassis Mount |
| Nominal Vgs | 4.5V |
| Package Quantity | 10 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 700W |
| Rds On Max | 165mR |
| Reach SVHC Compliant | No |
| Reverse Recovery Time | 250ns |
| RoHS Compliant | Yes |
| Series | HiPerFET™ |
| Termination | Screw |
| Threshold Voltage | 4.5V |
| Turn-Off Delay Time | 100ns |
| Weight | 3.6E-05kg |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXFN44N80 Datasheet
Download the complete datasheet for Ixys IXFN44N80 to view detailed technical specifications.
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