The IXFN44N80Q3 is a high-power N-channel MOSFET with a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. It features a drain to source breakdown voltage of 800V and a continuous drain current of 37A. The device has a maximum power dissipation of 780W and a drain to source resistance of 165mR. It is packaged in a SOT-227-4 package and is RoHS compliant. The IXFN44N80Q3 is suitable for high-power applications requiring a high current and voltage handling capability.
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| Package/Case | SOT-227-4 |
| Continuous Drain Current (ID) | 37A |
| Drain to Source Breakdown Voltage | 800V |
| Drain to Source Resistance | 165mR |
| Drain to Source Voltage (Vdss) | 800V |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 9.6mm |
| Input Capacitance | 9.84nF |
| Length | 38.23mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 780W |
| Mount | Chassis Mount, Panel |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 780W |
| Rds On Max | 190mR |
| RoHS Compliant | Yes |
| Series | HiPerFET™ |
| Turn-Off Delay Time | 63ns |
| Turn-On Delay Time | 45ns |
| Width | 25.07mm |
| RoHS | Compliant |
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