Ixys
IXFN48N50U2
Power Field-Effect Transistor, 48A I(D), 500V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MINIBLOC-4
PackageSOT-227-4
MountingChassis Mount
PolarityN-CHANNEL
Power520W
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Technical Specifications
Ixys IXFN48N50U2 technical specifications.
General
Package/Case
SOT-227-4
Continuous Drain Current (ID)
48A
Drain to Source Breakdown Voltage
500V
Drain to Source Resistance
100mR
Drain to Source Voltage (Vdss)
500V
Fall Time
30ns
Gate to Source Voltage (Vgs)
20V
Input Capacitance
8.4nF
Max Operating Temperature
150°C
Min Operating Temperature
-40°C
Max Power Dissipation
520W
Mount
Chassis Mount
Package Quantity
10
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
520W
Rds On Max
100mR
RoHS Compliant
Yes
Series
HiPerFET™
Turn-Off Delay Time
100ns
Compliance
RoHS
Compliant
Datasheet
Ixys IXFN48N50U2 Datasheet
Download the complete datasheet for Ixys IXFN48N50U2 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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