N-Channel Power MOSFET featuring 600V drain-source breakdown voltage and 40A continuous drain current. This silicon Metal-oxide Semiconductor FET offers a low 0.14ohm drain-source resistance and 625W maximum power dissipation. Designed for chassis mount applications, it operates within a temperature range of -55°C to 150°C and includes fast switching characteristics with a 30ns turn-on delay and 22ns fall time. The component is RoHS compliant and lead-free.
PackageSOT-227-4
Current Rating48A
MountingChassis Mount, Panel, Screw
PolarityN-CHANNEL
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Technical Specifications
Ixys IXFN48N60P technical specifications.
General
| Package/Case | SOT-227-4 |
| Continuous Drain Current (ID) | 40A |
| Current Rating | 48A |
| Drain to Source Breakdown Voltage | 600V |
| Drain to Source Resistance | 140mR |
| Drain to Source Voltage (Vdss) | 600V |
| Fall Time | 22ns |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 9.6mm |
| Input Capacitance | 8.86nF |
| Lead Free | Lead Free |
| Length | 38.23mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 625W |
| Mount | Chassis Mount, Panel, Screw |
| Package Quantity | 10 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 625W |
| Rds On Max | 140mR |
| RoHS Compliant | Yes |
| Series | PolarHV™ |
| Turn-Off Delay Time | 85ns |
| Turn-On Delay Time | 30ns |
| DC Rated Voltage | 600V |
| Width | 25.42mm |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXFN48N60P Datasheet
Download the complete datasheet for Ixys IXFN48N60P to view detailed technical specifications.
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