N-channel power MOSFET featuring 500V drain-source breakdown voltage and 50A continuous drain current. This silicon metal-oxide semiconductor FET offers a low drain-source on-resistance of 90mΩ maximum. Designed for high power applications, it supports a maximum power dissipation of 600W and operates within a temperature range of -55°C to 150°C. The component is housed in a SOT-227-4 package, suitable for chassis mounting via screw.
PackageSOT-227-4
MountingChassis Mount, Screw
PolarityN-CHANNEL
Power600W
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Technical Specifications
Ixys IXFN50N50 technical specifications.
General
| Package/Case | SOT-227-4 |
| Continuous Drain Current (ID) | 50A |
| Drain to Source Breakdown Voltage | 500V |
| Drain to Source Resistance | 100mR |
| Drain to Source Voltage (Vdss) | 500V |
| Drain-source On Resistance-Max | 90MR |
| Fall Time | 45ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 9.4nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 600W |
| Mount | Chassis Mount, Screw |
| Number of Elements | 1 |
| Package Quantity | 10 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 600W |
| Radiation Hardening | No |
| Rds On Max | 90mR |
| RoHS Compliant | Yes |
| Series | HiPerFET™ |
| Turn-Off Delay Time | 120ns |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXFN50N50 Datasheet
Download the complete datasheet for Ixys IXFN50N50 to view detailed technical specifications.
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