N-Channel Power MOSFET featuring 75V drain-source breakdown voltage and 480A continuous drain current. This silicon Metal-oxide Semiconductor FET offers a low 1.9mΩ drain-to-source resistance and 940W maximum power dissipation. Designed for high-power applications, it operates within a temperature range of -55°C to 175°C and is housed in a SOT-227-4 package for chassis mounting. Key switching characteristics include a 48ns turn-on delay and 35ns fall time.
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| Package/Case | SOT-227-4 |
| Continuous Drain Current (ID) | 480A |
| Drain to Source Breakdown Voltage | 75V |
| Drain to Source Resistance | 1.5mR |
| Drain to Source Voltage (Vdss) | 75V |
| Fall Time | 35ns |
| Gate to Source Voltage (Vgs) | 5V |
| Input Capacitance | 41nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 940W |
| Mount | Chassis Mount, Screw |
| Number of Elements | 1 |
| Number of Outputs | 1 |
| Output Current | 480A |
| Output Voltage | 75V |
| Package Quantity | 10 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 940W |
| Radiation Hardening | No |
| Rds On Max | 1.9mR |
| RoHS Compliant | Yes |
| Series | GigaMOS™, HiperFET™, TrenchT2™ |
| Supply Current | 200A |
| Turn-Off Delay Time | 80ns |
| Turn-On Delay Time | 48ns |
| RoHS | Compliant |
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