Ixys
IXFN55N50F
Power Field-Effect Transistor, 55A I(D), 500V, 0.085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MINIBLOC-4
PackageSOT-227-4
MountingChassis Mount
PolarityN-CHANNEL
Power600W
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Technical Specifications
Ixys IXFN55N50F technical specifications.
General
Package/Case
SOT-227-4
Continuous Drain Current (ID)
55A
Drain to Source Breakdown Voltage
500V
Drain to Source Resistance
85mR
Drain to Source Voltage (Vdss)
500V
Fall Time
9.6ns
Gate to Source Voltage (Vgs)
20V
Input Capacitance
6.7nF
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
600W
Mount
Chassis Mount
Package Quantity
10
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
600W
Rds On Max
85mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
HiPerRF™
Turn-Off Delay Time
45ns
Compliance
RoHS
Compliant
Datasheet
Ixys IXFN55N50F Datasheet
Download the complete datasheet for Ixys IXFN55N50F to view detailed technical specifications.
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