The IXFN55N50F is a high-power N-channel MOSFET with a maximum operating temperature range of -55°C to 150°C. It features a continuous drain current of 55A and a drain to source breakdown voltage of 500V. The device has a drain to source resistance of 85mR and a maximum power dissipation of 600W. The IXFN55N50F is packaged in a SOT-227-4 package and is compliant with RoHS regulations.
PackageSOT-227-4
MountingChassis Mount
PolarityN-CHANNEL
Power600W
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Technical Specifications
Ixys IXFN55N50F technical specifications.
General
| Package/Case | SOT-227-4 |
| Continuous Drain Current (ID) | 55A |
| Drain to Source Breakdown Voltage | 500V |
| Drain to Source Resistance | 85mR |
| Drain to Source Voltage (Vdss) | 500V |
| Fall Time | 9.6ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 6.7nF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 600W |
| Mount | Chassis Mount |
| Package Quantity | 10 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 600W |
| Rds On Max | 85mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | HiPerRF™ |
| Turn-Off Delay Time | 45ns |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXFN55N50F Datasheet
Download the complete datasheet for Ixys IXFN55N50F to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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