N-Channel Power MOSFET featuring 800V drain-source breakdown voltage and 53A continuous drain current. This silicon Metal-Oxide Semiconductor FET offers a low 140mΩ Rds On and 1.04kW maximum power dissipation. Designed for chassis mounting with a SOT-227-4 package, it operates from -55°C to 150°C. Key electrical characteristics include 18nF input capacitance and 5V threshold voltage.
PackageSOT-227-4
MountingChassis Mount, Panel, Screw
PolarityN-CHANNEL
Power1.04kW
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Technical Specifications
Ixys IXFN60N80P technical specifications.
General
| Package/Case | SOT-227-4 |
| Continuous Drain Current (ID) | 53A |
| Drain to Source Breakdown Voltage | 800V |
| Drain to Source Resistance | 140mR |
| Drain to Source Voltage (Vdss) | 800V |
| Fall Time | 26ns |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 9.6mm |
| Input Capacitance | 18nF |
| Lead Free | Lead Free |
| Length | 38.23mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.04kW |
| Mount | Chassis Mount, Panel, Screw |
| Number of Elements | 1 |
| Package Quantity | 10 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 1.04kW |
| Radiation Hardening | No |
| Rds On Max | 140mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | PolarHV™ |
| Threshold Voltage | 5V |
| Turn-Off Delay Time | 110ns |
| Turn-On Delay Time | 36ns |
| Width | 25.42mm |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXFN60N80P Datasheet
Download the complete datasheet for Ixys IXFN60N80P to view detailed technical specifications.
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