N-Channel Power MOSFET, 800V Vdss, 49A Continuous Drain Current (ID), and 140mΩ Max Drain-Source On-Resistance. Features a 960W Max Power Dissipation and operates within a -55°C to 150°C temperature range. This silicon Metal-oxide Semiconductor FET is housed in a SOT-227-4 MINIBLOC-4 package, designed for chassis or panel mounting. Includes 54ns turn-on and 62ns turn-off delay times.
PackageSOT-227-4
MountingChassis Mount, Panel
PolarityN-CHANNEL
Power960W
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Technical Specifications
Ixys IXFN62N80Q3 technical specifications.
General
| Package/Case | SOT-227-4 |
| Continuous Drain Current (ID) | 49A |
| Drain to Source Breakdown Voltage | 800V |
| Drain to Source Resistance | 140mR |
| Drain to Source Voltage (Vdss) | 800V |
| Drain-source On Resistance-Max | 140MR |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 9.6mm |
| Input Capacitance | 13.6nF |
| Lead Free | Lead Free |
| Length | 38.23mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 960W |
| Mount | Chassis Mount, Panel |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 960W |
| Rds On Max | 140mR |
| RoHS Compliant | Yes |
| Series | HiPerFET™ |
| Turn-Off Delay Time | 62ns |
| Turn-On Delay Time | 54ns |
| Width | 25.07mm |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXFN62N80Q3 Datasheet
Download the complete datasheet for Ixys IXFN62N80Q3 to view detailed technical specifications.
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