N-Channel Power MOSFET featuring 500V drain-source breakdown voltage and 61A continuous drain current. This silicon Metal-oxide Semiconductor FET offers a low 85mΩ drain-source on-resistance and 700W maximum power dissipation. Designed for chassis mounting, it operates within a temperature range of -55°C to 150°C and includes fast switching characteristics with a 30ns turn-on delay and 22ns fall time. The component is housed in a SOT-227-4 plastic package and is RoHS compliant.
PackageSOT-227-4
Current Rating64A
MountingChassis Mount, Panel, Screw
PolarityN-CHANNEL
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Technical Specifications
Ixys IXFN64N50P technical specifications.
General
Package/Case
SOT-227-4
Continuous Drain Current (ID)
61A
Current Rating
64A
Drain to Source Breakdown Voltage
500V
Drain to Source Resistance
85mR
Drain to Source Voltage (Vdss)
500V
Drain-source On Resistance-Max
85MR
Fall Time
22ns
Gate to Source Voltage (Vgs)
30V
Height
9.6mm
Input Capacitance
8.7nF
Lead Free
Lead Free
Length
38.23mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
700W
Mount
Chassis Mount, Panel, Screw
Number of Elements
1
Package Quantity
10
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
700W
Radiation Hardening
No
Rds On Max
85mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
PolarHV™
Threshold Voltage
5.5V
Turn-Off Delay Time
85ns
Turn-On Delay Time
30ns
DC Rated Voltage
500V
Width
25.42mm
Compliance
RoHS
Compliant
Datasheet
Ixys IXFN64N50P Datasheet
Download the complete datasheet for Ixys IXFN64N50P to view detailed technical specifications.
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