The IXFN70N60Q2 is a high-power N-channel MOSFET with a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. It features a drain to source breakdown voltage of 600V and a continuous drain current of 70A. The device has a maximum power dissipation of 890W and is packaged in a SOT-227-4 package. The IXFN70N60Q2 is lead-free and RoHS compliant, making it suitable for a wide range of applications.
PackageSOT-227-4
MountingChassis Mount, Screw
PolarityN-CHANNEL
Power890W
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Technical Specifications
Ixys IXFN70N60Q2 technical specifications.
General
| Package/Case | SOT-227-4 |
| Continuous Drain Current (ID) | 70A |
| Drain to Source Breakdown Voltage | 600V |
| Drain to Source Resistance | 80mR |
| Drain to Source Voltage (Vdss) | 600V |
| Fall Time | 12ns |
| Gate to Source Voltage (Vgs) | 30V |
| Input Capacitance | 7.2nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 890W |
| Mount | Chassis Mount, Screw |
| Number of Elements | 1 |
| Package Quantity | 10 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 890W |
| Radiation Hardening | No |
| Rds On Max | 80mR |
| RoHS Compliant | Yes |
| Series | HiPerFET™ |
| Turn-Off Delay Time | 60ns |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXFN70N60Q2 Datasheet
Download the complete datasheet for Ixys IXFN70N60Q2 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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