N-Channel Power MOSFET featuring 300V drain-source breakdown voltage and 73A continuous drain current. This single-element silicon FET offers a low 45mΩ drain-source on-resistance. Designed for chassis mounting with screw terminals, it operates from -55°C to 150°C and supports up to 520W power dissipation. Key specifications include a 4V threshold voltage and 9nF input capacitance.
PackageSOT-227-4
Current Rating73A
MountingChassis Mount, Screw
PolarityN-CHANNEL
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Technical Specifications
Ixys IXFN73N30 technical specifications.
General
| Package/Case | SOT-227-4 |
| Continuous Drain Current (ID) | 73A |
| Current Rating | 73A |
| Drain to Source Breakdown Voltage | 300V |
| Drain to Source Resistance | 45mR |
| Drain to Source Voltage (Vdss) | 300V |
| Drain-source On Resistance-Max | 45MR |
| Dual Supply Voltage | 300V |
| Fall Time | 50ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 9nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 520W |
| Mount | Chassis Mount, Screw |
| Nominal Vgs | 4V |
| Number of Elements | 1 |
| Package Quantity | 10 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 520W |
| Radiation Hardening | No |
| Rds On Max | 45mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | HiPerFET™ |
| Threshold Voltage | 4V |
| Turn-Off Delay Time | 100ns |
| DC Rated Voltage | 300V |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXFN73N30 Datasheet
Download the complete datasheet for Ixys IXFN73N30 to view detailed technical specifications.
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