Ixys
IXFN73N30Q
Power Field-Effect Transistor, 73A I(D), 300V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, MINIBLOC-4
Power Field-Effect Transistor, 73A I(D), 300V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, MINIBLOC-4
PackageSOT-227-4
MountingChassis Mount
PolarityN-CHANNEL
Power500W
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Technical Specifications
Ixys IXFN73N30Q technical specifications.
General
| Package/Case | SOT-227-4 |
| Continuous Drain Current (ID) | 73A |
| Drain to Source Breakdown Voltage | 300V |
| Drain to Source Resistance | 45mR |
| Drain to Source Voltage (Vdss) | 300V |
| Fall Time | 12ns |
| Gate to Source Voltage (Vgs) | 30V |
| Input Capacitance | 5.4nF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 481W |
| Mount | Chassis Mount |
| Package Quantity | 10 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 500W |
| Rds On Max | 45mR |
| RoHS Compliant | Yes |
| Series | HiPerFET™ |
| Turn-Off Delay Time | 82ns |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXFN73N30Q Datasheet
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