N-Channel Power MOSFET, 500V Vds, 80A Continuous Drain Current, 55mΩ Max Rds(on). Features 780W Max Power Dissipation, 27ns Fall Time, and 250ns Reverse Recovery Time. Designed for chassis mounting with screw termination in a SOT-227-4 package. Operates from -55°C to 150°C, with a 4.5V nominal Vgs threshold.
PackageSOT-227-4
Current Rating80A
MountingChassis Mount, Screw
PolarityN-CHANNEL
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Technical Specifications
Ixys IXFN80N50 technical specifications.
General
| Package/Case | SOT-227-4 |
| Continuous Drain Current (ID) | 80A |
| Current Rating | 80A |
| Drain to Source Breakdown Voltage | 500V |
| Drain to Source Resistance | 55mR |
| Drain to Source Voltage (Vdss) | 500V |
| Drain-source On Resistance-Max | 55MR |
| Dual Supply Voltage | 500V |
| Fall Time | 27ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 9.89nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 780W |
| Mount | Chassis Mount, Screw |
| Nominal Vgs | 4.5V |
| Number of Elements | 1 |
| Package Quantity | 10 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 780W |
| Radiation Hardening | No |
| Rds On Max | 55mR |
| Reach SVHC Compliant | Unknown |
| Reverse Recovery Time | 250ns |
| RoHS Compliant | Yes |
| Series | HiPerFET™ |
| Termination | Screw |
| Threshold Voltage | 4.5V |
| Turn-Off Delay Time | 102ns |
| DC Rated Voltage | 500V |
| Weight | 3.6E-05kg |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXFN80N50 Datasheet
Download the complete datasheet for Ixys IXFN80N50 to view detailed technical specifications.
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