IXYS

IXFN80N50P

Datasheet

500V 66A N-Channel MOSFET, 65mR Rds(on), 700W, SOT-227

Ixys

IXFN80N50P

Name: IXFN80N50P Ixys
Brand: Ixys
SKU: IXFN80N50P

500V 66A N-Channel MOSFET, 65mR Rds(on), 700W, SOT-227

N-Channel Power MOSFET, 500V Vds, 66A Continuous Drain Current, 65mΩ Max Drain-Source On-Resistance. Features 700W Max Power Dissipation, 150°C Max Operating Temperature, and 30V Gate-to-Source Voltage. This silicon Metal-oxide Semiconductor FET is housed in a SOT-227-4 MINIBLOC-4 package, designed for chassis or panel mounting. Includes fast switching characteristics with 18ns fall time and 25ns turn-on delay.

PackageSOT-227-4

Current Rating80A

MountingChassis Mount, Panel

PolarityN-CHANNEL

Quick Jump:

Technical Specifications

Ixys IXFN80N50P technical specifications.

General

Package/Case	SOT-227-4
Continuous Drain Current (ID)	66A
Current Rating	80A
Drain to Source Breakdown Voltage	500V
Drain to Source Resistance	65mR
Drain to Source Voltage (Vdss)	500V
Drain-source On Resistance-Max	55MR
Fall Time	18ns
Gate to Source Voltage (Vgs)	30V
Height	9.6mm
Input Capacitance	12.7nF
Lead Free	Lead Free
Length	38.2mm
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Max Power Dissipation	700W
Mount	Chassis Mount, Panel
Package Quantity	10
Packaging	Rail/Tube
Polarity	N-CHANNEL
Power Dissipation	700W
Rds On Max	65mR
RoHS Compliant	Yes
Series	PolarHV™
Turn-Off Delay Time	70ns
Turn-On Delay Time	25ns
DC Rated Voltage	500V
Width	25.07mm