N-Channel Power MOSFET, 500V Drain-Source Voltage, 80A Continuous Drain Current, and 60mΩ Drain-Source On-Resistance. Features include a 12.8nF input capacitance, 11ns fall time, and 60ns turn-off delay. This silicon, metal-oxide semiconductor FET is designed for chassis mounting with a screw terminal, offering a maximum power dissipation of 890W and operating temperature range of -55°C to 150°C. It is lead-free and RoHS compliant.
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Ixys IXFN80N50Q2 technical specifications.
| Package/Case | SOT-227-4 |
| Continuous Drain Current (ID) | 80A |
| Drain to Source Breakdown Voltage | 500V |
| Drain to Source Resistance | 60mR |
| Drain to Source Voltage (Vdss) | 500V |
| Drain-source On Resistance-Max | 60MR |
| Fall Time | 11ns |
| Gate to Source Voltage (Vgs) | 30V |
| Input Capacitance | 12.8nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 890W |
| Mount | Chassis Mount, Screw |
| Number of Elements | 1 |
| Package Quantity | 10 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 890W |
| Radiation Hardening | No |
| Rds On Max | 60mR |
| RoHS Compliant | Yes |
| Series | HiPerFET™ |
| Turn-Off Delay Time | 60ns |
| RoHS | Compliant |
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