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Technical Specifications
Ixys IXFN80N50Q3 technical specifications.
General
| Package/Case | SOT-227-4 |
| Continuous Drain Current (ID) | 63A |
| Drain to Source Breakdown Voltage | 500V |
| Drain to Source Resistance | 65mR |
| Drain to Source Voltage (Vdss) | 500V |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 9.6mm |
| Input Capacitance | 10nF |
| Length | 38.23mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 780W |
| Mount | Chassis Mount, Panel |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 780W |
| Rds On Max | 65mR |
| RoHS Compliant | Yes |
| Series | HiPerFET™ |
| Turn-Off Delay Time | 43ns |
| Turn-On Delay Time | 30ns |
| Width | 25.07mm |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXFN80N50Q3 Datasheet
Download the complete datasheet for Ixys IXFN80N50Q3 to view detailed technical specifications.
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