The IXFN80N60P3 is a high-power MOSFET with a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. It features a maximum power dissipation of 960W and a continuous drain current of 66A. The device is packaged in a SOT-227-4 package and is suitable for chassis mount, panel, or screw mounting. The IXFN80N60P3 is compliant with RoHS regulations and is available in a lead-free version.
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Ixys IXFN80N60P3 technical specifications.
| Package/Case | SOT-227-4 |
| Continuous Drain Current (ID) | 66A |
| Drain to Source Voltage (Vdss) | 600V |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 9.6mm |
| Input Capacitance | 13.1nF |
| Lead Free | Lead Free |
| Length | 38.23mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 960W |
| Mount | Chassis Mount, Panel, Screw |
| Number of Elements | 1 |
| Packaging | Rail/Tube |
| Power Dissipation | 960W |
| Radiation Hardening | No |
| Rds On Max | 70mR |
| RoHS Compliant | Yes |
| Series | HiPerFET™, Polar3™ |
| Turn-Off Delay Time | 87ns |
| Turn-On Delay Time | 48ns |
| Width | 25.07mm |
| RoHS | Compliant |
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