N-Channel Power MOSFET featuring 600V drain-to-source breakdown voltage and 72A continuous drain current. This silicon Metal-oxide Semiconductor FET offers a low 75mΩ Rds On resistance and a maximum power dissipation of 1.04kW. Designed for chassis or panel mounting, it comes in a SOT-227-4 package with a maximum operating temperature of 150°C. Key switching characteristics include a 28ns turn-on delay and 24ns fall time.
PackageSOT-227-4
MountingChassis Mount, Panel
PolarityN-CHANNEL
Power1.04kW
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Technical Specifications
Ixys IXFN82N60P technical specifications.
General
| Package/Case | SOT-227-4 |
| Continuous Drain Current (ID) | 72A |
| Drain to Source Breakdown Voltage | 600V |
| Drain to Source Resistance | 750mR |
| Drain to Source Voltage (Vdss) | 600V |
| Fall Time | 24ns |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 9.6mm |
| Input Capacitance | 23nF |
| Lead Free | Lead Free |
| Length | 38.2mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.04kW |
| Mount | Chassis Mount, Panel |
| Package Quantity | 10 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 1.04kW |
| Rds On Max | 75mR |
| RoHS Compliant | Yes |
| Series | PolarHV™ |
| Turn-Off Delay Time | 79ns |
| Turn-On Delay Time | 28ns |
| Width | 25.07mm |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXFN82N60P Datasheet
Download the complete datasheet for Ixys IXFN82N60P to view detailed technical specifications.
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