N-Channel Power MOSFET, 600V Vds, 66A Continuous Drain Current, 75mΩ Rds On. Features include 960W Max Power Dissipation, 13.5nF Input Capacitance, and 30V Gate to Source Voltage. Designed for chassis mounting with screw terminals, this silicon Metal-oxide Semiconductor FET operates from -55°C to 150°C. Turn-on and turn-off delay times are 40ns and 60ns respectively. Packaged in a SOT-227-4 MINIBLOC-4, this RoHS compliant component is lead-free.
PackageSOT-227-4
MountingChassis Mount, Screw
PolarityN-CHANNEL
Power960W
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Technical Specifications
Ixys IXFN82N60Q3 technical specifications.
General
| Package/Case | SOT-227-4 |
| Continuous Drain Current (ID) | 66A |
| Drain to Source Breakdown Voltage | 600V |
| Drain to Source Resistance | 75mR |
| Drain to Source Voltage (Vdss) | 600V |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 9.6mm |
| Input Capacitance | 13.5nF |
| Lead Free | Lead Free |
| Length | 38.23mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 960W |
| Mount | Chassis Mount, Screw |
| Package Quantity | 10 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 960W |
| Rds On Max | 75mR |
| RoHS Compliant | Yes |
| Series | HiPerFET™ |
| Turn-Off Delay Time | 60ns |
| Turn-On Delay Time | 40ns |
| Width | 25.07mm |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXFN82N60Q3 Datasheet
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