Ixys
IXFP102N15T
Power Field-Effect Transistor, 102A I(D), 150V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, PLASTIC, TO-220, 3 PIN
PackageTO-220AB
MountingThrough Hole
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Technical Specifications
Ixys IXFP102N15T technical specifications.
General
Package/Case
TO-220AB
Continuous Drain Current (ID)
102A
Drain to Source Voltage (Vdss)
150V
Input Capacitance
5.22nF
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
455W
Mount
Through Hole
Packaging
Rail/Tube
Rds On Max
18mR
RoHS Compliant
Yes
Series
HiPerFET™
Compliance
RoHS
Compliant
Datasheet
Ixys IXFP102N15T Datasheet
Download the complete datasheet for Ixys IXFP102N15T to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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