N-Channel Power MOSFET, 600V Drain-Source Voltage, 10A Continuous Drain Current, and 740mΩ Max Drain-Source On-Resistance. Features include a 200W Max Power Dissipation, 1.61nF Input Capacitance, and 21ns Fall Time. This silicon Metal-oxide Semiconductor FET is housed in a TO-220 package for through-hole mounting. Operating temperature range is -55°C to 150°C.
PackageTO-220
Current Rating10A
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Ixys IXFP10N60P technical specifications.
General
| Package/Case | TO-220 |
| Continuous Drain Current (ID) | 10A |
| Current Rating | 10A |
| Drain to Source Breakdown Voltage | 600V |
| Drain to Source Resistance | 740mR |
| Drain to Source Voltage (Vdss) | 600V |
| Drain-source On Resistance-Max | 740MR |
| Fall Time | 21ns |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 9.15mm |
| Input Capacitance | 1.61nF |
| Lead Free | Lead Free |
| Length | 10.66mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 200W |
| Mount | Through Hole |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 200W |
| Rds On Max | 740mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | HiPerFET™, PolarP2™ |
| Threshold Voltage | 5.5V |
| Turn-Off Delay Time | 65ns |
| Turn-On Delay Time | 23ns |
| DC Rated Voltage | 600V |
| Width | 4.83mm |
Compliance
| RoHS | Compliant |
Datasheet
Ixys IXFP10N60P Datasheet
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