IXYS

IXFP10N60P

Datasheet

600V N-Channel MOSFET, 10A, 740mR Rds(on), TO-220

Ixys

IXFP10N60P

Name: IXFP10N60P Ixys
Brand: Ixys
SKU: IXFP10N60P

600V N-Channel MOSFET, 10A, 740mR Rds(on), TO-220

N-Channel Power MOSFET, 600V Drain-Source Voltage, 10A Continuous Drain Current, and 740mΩ Max Drain-Source On-Resistance. Features include a 200W Max Power Dissipation, 1.61nF Input Capacitance, and 21ns Fall Time. This silicon Metal-oxide Semiconductor FET is housed in a TO-220 package for through-hole mounting. Operating temperature range is -55°C to 150°C.

PackageTO-220

Current Rating10A

MountingThrough Hole

PolarityN-CHANNEL

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Technical Specifications

Ixys IXFP10N60P technical specifications.

General

Package/Case	TO-220
Continuous Drain Current (ID)	10A
Current Rating	10A
Drain to Source Breakdown Voltage	600V
Drain to Source Resistance	740mR
Drain to Source Voltage (Vdss)	600V
Drain-source On Resistance-Max	740MR
Fall Time	21ns
Gate to Source Voltage (Vgs)	30V
Height	9.15mm
Input Capacitance	1.61nF
Lead Free	Lead Free
Length	10.66mm
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Max Power Dissipation	200W
Mount	Through Hole
Package Quantity	50
Packaging	Rail/Tube
Polarity	N-CHANNEL
Power Dissipation	200W
Rds On Max	740mR
Reach SVHC Compliant	No
RoHS Compliant	Yes
Series	HiPerFET™, PolarP2™
Threshold Voltage	5.5V
Turn-Off Delay Time	65ns
Turn-On Delay Time	23ns
DC Rated Voltage	600V
Width	4.83mm