N-Channel Power MOSFET featuring 800V drain-source breakdown voltage and 10A continuous drain current. This silicon Metal-oxide Semiconductor FET offers a low 1.1 ohm drain-source resistance (Rds On Max) and a maximum power dissipation of 300W. Designed for through-hole mounting in a TO-220 plastic package, it operates within a temperature range of -55°C to 150°C. Key switching characteristics include a 21ns turn-on delay and a 22ns fall time.
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Ixys IXFP10N80P technical specifications.
| Package/Case | TO-220 |
| Continuous Drain Current (ID) | 10A |
| Drain to Source Breakdown Voltage | 800V |
| Drain to Source Resistance | 1.1R |
| Drain to Source Voltage (Vdss) | 800V |
| Fall Time | 22ns |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 9.15mm |
| Input Capacitance | 2.05nF |
| Length | 10.66mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 300W |
| Mount | Through Hole |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 300W |
| Rds On Max | 1.1R |
| RoHS Compliant | Yes |
| Series | HiPerFET™, PolarHT™ |
| Turn-Off Delay Time | 62ns |
| Turn-On Delay Time | 21ns |
| Width | 4.83mm |
| RoHS | Compliant |
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