N-Channel Power MOSFET, 500V Drain-Source Voltage (Vdss), 16A Continuous Drain Current (ID), and 400mΩ Max Drain-Source On-Resistance (Rds On). Features include 300W Max Power Dissipation, 2.25nF Input Capacitance, 22ns Fall Time, and 70ns Turn-Off Delay Time. This single-element silicon FET is housed in a TO-220AB plastic package for through-hole mounting. Operates from -55°C to 150°C, is RoHS compliant, and lead-free.
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| Package/Case | TO-220 |
| Continuous Drain Current (ID) | 16A |
| Current Rating | 16A |
| Drain to Source Breakdown Voltage | 500V |
| Drain to Source Resistance | 400mR |
| Drain to Source Voltage (Vdss) | 500V |
| Drain-source On Resistance-Max | 400MR |
| Fall Time | 22ns |
| Gate to Source Voltage (Vgs) | 30V |
| Input Capacitance | 2.25nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 300W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 300W |
| Radiation Hardening | No |
| Rds On Max | 400mR |
| RoHS Compliant | Yes |
| Series | PolarHV™ HiPerFET™ |
| Turn-Off Delay Time | 70ns |
| DC Rated Voltage | 500V |
| RoHS | Compliant |
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