Ixys
IXFP180N10T2
Power Field-Effect Transistor, 180A I(D), 100V, 0.006ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, PLASTIC PACKAGE-3
PackageTO-220AB
MountingThrough Hole
Quick Jump:
Technical Specifications
Ixys IXFP180N10T2 technical specifications.
General
Package/Case
TO-220AB
Continuous Drain Current (ID)
180A
Drain to Source Voltage (Vdss)
100V
Input Capacitance
10.5nF
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
480W
Mount
Through Hole
Packaging
Rail/Tube
Rds On Max
6mR
RoHS Compliant
Yes
Series
GigaMOS™, HiperFET™, TrenchT2™
Compliance
RoHS
Compliant
Datasheet
Ixys IXFP180N10T2 Datasheet
Download the complete datasheet for Ixys IXFP180N10T2 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
